Stronger and device-friendly SiC semiconductors than Si.
SiC semiconductor, metal-oxide-semiconductor (MOS) junction device, power device, hard electronics, quantum effect device.
Silicon carbide (SiC) can form a SiO2 film on its surface through thermal oxidation, and with the mass production of 8-inch wafers and the development of device fabrication technology, it is a semiconductor material that is as easy to apply in devices as Si semiconductors. Additionally, it possesses properties similar to diamond, such as wide bandgap, high radiation resistance, high thermal resistance, and robustness. SiC truly is a material that takes the best of both Si and C (diamond)! Furthermore, recent research over the past few years has revealed that SiC contains single defects similar to diamond NV centers, which can be utilized as single photon sources or spins, opening up pathways for applications in quantum computing, quantum photonics, and quantum sensing.
- 企業：埼玉大学 オープンイノベーションセンター
- 価格：Other
